韩波

韩波副教授

Dr. Bo HAN, Associate Professor of Chemistry
可持续能源实验室 www.3657.com 中国地质大学(武汉)		Sustainable Energy Laboratory Faculty of Materials Science and Chemistry China University of Geosciences Wuhan
Contacts
Address:	湖北省武汉市洪山区鲁磨路388号中国地质大学www.3657.com Dept. Mat. Sci. & Chem., China Univ. Geosci. Wuhan :: 388 Lumo road, Wuhan 430074, China P. R.
Phone:	86-27-6788-3049 Office
Email:	hanbo@cug.edu.cn or hanbo39200900@gmail.com or 649904844@qq.com

韩波，湖北仙桃人，1982年7月出生，2005年毕业于中国地质大学(武汉)应用化学专业，2010年在中国地质大学(武汉)获博士学位，2011.9-2012.9期间在新加坡国立大学化学系作博士后研究。主要从事计算化学与计算材料学方面的研究工作。研究领域涉及表面化学、能源材料、均相与多相催化等方面。已发表SCI论文20余篇(点击查看)，发布美国专利2项、欧洲专利1项、日本专利1项。

教育背景(Education)

学位	起止时间	学校与学院	专业
学士	2001.9-2005.6	中国地质大学(武汉)www.3657.com	应用化学
硕士	2005.9-2008.6	中国地质大学(武汉)www.3657.com	应用化学
博士	2008.9-2010.12	中国地质大学(武汉)www.3657.com	岩石矿物材料学

工作经历(Work Experiences)

起止时间	工作单位	职位
2011.3-	中国地质大学(武汉)www.3657.com	教师
2011.9-2012.9	新加坡国立大学化学系	博士后

研究领域(Research Interests)

1.	表面化学：1). 半导体表面功能薄膜的沉积行为和机理; 2). 异相/均相催化反应行为及先进催化剂的设计。 Surface Chemistry: 1). Deposition behaviors and mechanisms of functional films on semiconductor surfaces; 2). Developing homogeneous/heterogeneous catalysts and investigating the catalytic behaviour.
2.	电化学：1). 新型电极材料的研发; 2). 电化学过程的界面行为。 Electrochemistry: 1). Developing novel materials for electrode; 2). Interfacial behavior during electrochemical process.

招生倾向 (Student Preferences)

1.	具有较好的结构化学基础知识;
2.	或具有较好的电化学基础知识;
3.	或具有较好的有机合成功底和经验.

项目列表 (Funds)

1.	《二氧化硅薄膜的原子层沉积反应机理及前驱体设计》, 国家自然科学基金青年项目项目经费24.0万元, 2013.1-2015.12, 主持；
2.	《新型原子层沉积前驱体的计算、设计与制备》, 中央高校基本科研业务费专项资金资助项目项目经费5.0万元, 2011.11-2013.12, 主持；
3.	《石墨烯/氧化物半导体复合体系在光伏转换与光催化制氢/氢解耦合反应中的应用》, 中国地质大学(武汉)中央高校第二批特色学科团队项目经费100.0万元, 2012.6-2015.5, 团队成员；
4.	《纳米粒子反应立场方法发展及其分子动力学模拟软件的实现》, 中国地质大学(武汉)"腾飞计划"人才基金项目经费30.0万元, 2011.6-2014.5, 排名第二；
5.	《Pt,Pd,Ni团簇和纳米颗粒催化氢反应力场的建立》, 国家自然科学基金面上项目项目经费32.0万元, 2010.1-2012.12, 排名第三 (项目编号 20973159)；
6.	《半导体芯片中Cu互联线廉价胶水材料的原子层沉积前驱体分子设计与制备》, 国家自然科学基金面上项目项目经费28.0万元, 2009.1-2011.12, 排名第三 (项目编号20873127)
7.	《Computational Screening of Sillicon Nitride Precursors for Low Temperature Deposition》等，国际合作项目项目经费34.5万美元, 2005.9-2012.12，排名第三 (项目编号201-828-P)

论文(Publications)


21.	Bo Han, Yubao Sun, Maohong Fan, Hansong Cheng, “On the CO2 Capture in Water-Free Monoethanolamine Solution: An ab Initio Molecular Dynamics Study”. J. Phys. Chem. B, 117:5971-5977 (2013). 【IF= 3.607】* DOI: 10.1021/jp4022932
20.	Huang Liang, Bo Han, Bin Han, A. Derecskei-Kovacs, M. Xiao, X. Lei, M. L. O’Neill, R. M. Pearlstein, H. Chandra, Hansong Cheng, “First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2 Thin Films with Di(sec-butylamino)silane and Ozone”. J. Phys. Chem. C, 117:19454-19463 (2013). 【IF= 4.805】 DOI: 10.1021/jp405541x
19.	Gang Ni, Bo Han, Hansong Cheng, “Effect of Al Electronic Configuration on the SiO2 Thin Film Growth via Catalytic Self-Assembling Deposition”. J. Phys. Chem. C, 117:22705-22713 (2013). 【IF= 4.805】 DOI: 10.1021/jp405847r
18.	Bo Han, Qingfan Zhang, Jinping Wu, Bing Han, Eugene J. Karwacki, Agnes Derecskei, Manchao Xiao, Xinjian Lei, Mark L. O’Neill, Hansong Cheng, “On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface”, J. Phys. Chem. C, 116:947-952 (2012). 【IF= 4.805】* DOI: 10.1021/jp2094802
17.	Ming Yang, Bo Han, Hansong Cheng, “First-Principles Study of Hydrogenation of Ethylene on a HxMoO3(010) Surface”. J. Phys. Chem. C, 116:24630-24638 (2012). 【IF= 4.805】 DOI: 10.1021/jp308255a
16.	Qinfan Zhang, Bo Han, Xiaowei Tang, Kevin Heier, Jimmy X. Li, John Hoffman, Minfa Lin, Stephanie L. Britton, Agnes Derecskei-Kovacs, Hansong Cheng, “On the Mechanisms of Carbon Formation Reaction on Ni(111) Surface”, J. Phys. Chem. C* 116:16522-16531 (2012) DOI: 10.1021/jp303648c
15.	Bo Han, Chenggang Zhou, Jinping Wu, D. J. Tempel, Hansong Cheng, “Understanding CO2 Capture Mechanisms in Aqueous Monoethanolamine via First Principles Simulations”. J. Phys. Chem. Lett., 2:522-526 (2011). 【IF= 6.585】* DOI: 10.1021/jz200037s
14.	Qinfan Zhang, Bo Han, Kevin Heier, Jimmy X. Li, John Hoffman, Minfa Lin, Agnes Derecskei-Kovacs, Hansong Cheng, “First Principles Study of Steam Carbon Reaction on γ-Fe(111) Surface”, J. Phys. Chem. C* 115:12068-12076 (2011) DOI: 10.1021/jp2019507
13.	Lei Chen, Gang Ni, Bo Han, Chenggang Zhou, Jinping Wu, “Mechanism of Water Gas Shift Reaction on Fe3O4(111) Surface”. Acta Chim. Sinica*, 69:393-398 (2011). full text
12.	Bo Han, Jinping Wu, Chenggang Zhou, Bei Chen, Roy Gordon, Xinjian Lei, David A. Roberts, Hansong Cheng, “First-principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials”, Angew. Chem. Int. Ed., 49:148-152 (2010). 【IF= 13.734】 DOI: 10.1002/anie.200905360
11.	Chenggang Zhou, Qingfan Zhang, Lei Chen, Bo Han, Gang Ni, Jinping Wu, Diwakar Garg, Hansong Cheng, “Density Functional Theory Study of Water Dissociative Chemisorption on the Fe3O4(111) Surface”, J. Phys. Chem. C*, 114:21405-21410 (2010). DOI: 10.1021/jp105040v
10.	Lei Chen, Qinfan Zhang, Yunfeng Zhang, Winston Z. Li, Bo Han, Chenggang Zhou, Jinping Wu, Robert C. Forrey, Diwakar Garg, Hansong Cheng, “A first principles study of water dissociation on small copper clusters”, Phys. Chem. Chem. Phys., 12:9845-9851 (2010). DOI: 10.1039/c001006e
9.	Bei Chen, Bo Han, Chenggang Zhou, Jinping Wu, “A Molecular Dynamic Simulation on the Agglomeration Behavior of Cu on TaN(111) surface”. Earth Science*, 34:635-640 (2009). full text
8.	Shujuan Yao, Chenggang Zhou, Bo Han, Ting Fan, Jinping Wu, Liang Chen, Hansong Cheng. “Chemisorption of small fullerenes Cn (n=28,32,36,40,44,48,60) on the Si(001)-c(2x1) surface”. Phys. Rev. B*, 79:155304 (2009). DOI: 10.1103/PhysRevB.79.155304
7.	Jiaye Li, Jinping Wu, Chenggang Zhou, Bo Han, Xinjian Lei, Roy Gordon, Hansong Cheng. “On the relative stability of cobalt- and nickel-based amidinate complexes against beta-migration”. Int. J. Quantum Chem.* 109: 756-763 (2009). DOI: 10.1002/qua.21880
6.	Bo Han, Jinping Wu, Chenggang Zhou, Jiaye Li, Xinjian Lei, John A. T. Norman, Thomas R. Gaffney, Roy Gordon, David A. Roberts, Hansong Cheng. “Ab Initio Molecular Dynamics Simulation on the Aggregation of a Cu Monolayer on a WN(001) Surface”. J. Phys. Chem. C, 112:9798-9802 (2008). 【IF= 4.805】 DOI: 10.1021/jp802979b
5.	Chenggang Zhou, Shujuan Yao, Bo Han, Liang Chen, Jinping Wu, Robert R. Forrey, and Hansong Cheng, “A Mechanistic Study of CO Removal on a Small H-Saturated Platinum Cluster”, Science in China, Series B: Chemistry*, 51:1187-1196 (2008). DOI: 10.1007/s11426-008-0135-z
4.	Shujuan Yao, Chenggang Zhou, Jinping Wu, Jiaye Li, Bo Han, Hansong Cheng, “On the electronic structures and spectroscopic properties of polyyne and its derivatives”. Int. J. Quantum Chem.*, 108:1565-1571 (2008). DOI: 10.1002/qua.21697
3.	Jiaye Li, Jinping Wu, Chenggang Zhou, Shujuan Yao, Bo Han, “Influence of Nitrogen Substituent of Amidinate Ligands to the Stability of Co(II) bis-amidinate ALD Precursors”. Acta Chim. Sinica, 66:165-169 (2008). full text
2.	Jinping Wu, Bo Han, Chenggang Zhou, Xinjian Lei, T. R. Gaffney, John A. T. Norman, Zhengwen Li, Roy Gordon, Hansong Cheng. “Density Function Theory Study of Copper Agglomeration on the WN(001) Surface”. J. Phys. Chem. C*, 111:9403-9406 (2007). DOI: 10.1021/jp072907q
1.	Chenggang Zhou, Jinping Wu, Bo Han, Shujuan Yao, Hansong Cheng. “Adsorption of fullerenes Cn(n=32,36,40,44,48,60) on the GaAs(001)-c(4x4) reconstructed surface”. Phys. Rev. B*, 73:195324 (2006). DOI: 10.1103/PhysRevB.73.195324

国际专利(International Patents)

1.	Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Method for Suppressing Agglomeration and Improving Semiconductor Device Adhesiveness". Japanese Patent JP2010062555. Application Number: JP2009000188053.
2.	Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Materials for adhesion enhancement of copper film on diffusion barriers". European Patent Application EP2154717. Application Number: EP20090167949.
3.	Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers". US patent US7919409. Application Number: 12/192603.
4.	Cheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. "Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers". US patent application US20100038785. Application Number: 12/192603.